Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
Cracks appeared in GaN epitaxial layers which were grown by a novel method combining metal organic vapor-phase epitaxy (MOCVD) and hydride vapor-phase epitaxy (HVPE) in one chamber. The origin of cracks in a 22-μm thick GaN film was fully investigated by high-resolution X-ray diffraction (XRD), micr...
| Main Authors: | , , , , , , , , , , , , , , |
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| Format: | Online |
| Language: | English |
| Published: |
Springer
2011
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212216/ |