Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
Cracks appeared in GaN epitaxial layers which were grown by a novel method combining metal organic vapor-phase epitaxy (MOCVD) and hydride vapor-phase epitaxy (HVPE) in one chamber. The origin of cracks in a 22-μm thick GaN film was fully investigated by high-resolution X-ray diffraction (XRD), micr...
| Main Authors: | , , , , , , , , , , , , , , |
|---|---|
| Format: | Online |
| Language: | English |
| Published: |
Springer
2011
|
| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212216/ |
| id |
pubmed-3212216 |
|---|---|
| recordtype |
oai_dc |
| spelling |
pubmed-32122162011-11-09 Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method Liu, Jianming Liu, Xianlin Li, Chengming Wei, Hongyuan Guo, Yan Jiao, Chunmei Li, Zhiwei Xu, Xiaoqing Song, Huaping Yang, Shaoyan Zhu, Qinsen Wang, Zhanguo Yang, Anli Yang, Tieying Wang, Huanhua Nano Express Cracks appeared in GaN epitaxial layers which were grown by a novel method combining metal organic vapor-phase epitaxy (MOCVD) and hydride vapor-phase epitaxy (HVPE) in one chamber. The origin of cracks in a 22-μm thick GaN film was fully investigated by high-resolution X-ray diffraction (XRD), micro-Raman spectra, and scanning electron microscopy (SEM). Many cracks under the surface were first observed by SEM after etching for 10 min. By investigating the cross section of the sample with high-resolution micro-Raman spectra, the distribution of the stress along the depth was determined. From the interface of the film/substrate to the top surface of the film, several turnings were found. A large compressive stress existed at the interface. The stress went down as the detecting area was moved up from the interface to the overlayer, and it was maintained at a large value for a long depth area. Then it went down again, and it finally increased near the top surface. The cross-section of the film was observed after cleaving and etching for 2 min. It was found that the crystal quality of the healed part was nearly the same as the uncracked region. This indicated that cracking occurred in the growth, when the tensile stress accumulated and reached the critical value. Moreover, the cracks would heal because of high lateral growth rate. Springer 2011-01-12 /pmc/articles/PMC3212216/ /pubmed/21711601 http://dx.doi.org/10.1186/1556-276X-6-69 Text en Copyright ©2011 Liu et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
| repository_type |
Open Access Journal |
| institution_category |
Foreign Institution |
| institution |
US National Center for Biotechnology Information |
| building |
NCBI PubMed |
| collection |
Online Access |
| language |
English |
| format |
Online |
| author |
Liu, Jianming Liu, Xianlin Li, Chengming Wei, Hongyuan Guo, Yan Jiao, Chunmei Li, Zhiwei Xu, Xiaoqing Song, Huaping Yang, Shaoyan Zhu, Qinsen Wang, Zhanguo Yang, Anli Yang, Tieying Wang, Huanhua |
| spellingShingle |
Liu, Jianming Liu, Xianlin Li, Chengming Wei, Hongyuan Guo, Yan Jiao, Chunmei Li, Zhiwei Xu, Xiaoqing Song, Huaping Yang, Shaoyan Zhu, Qinsen Wang, Zhanguo Yang, Anli Yang, Tieying Wang, Huanhua Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method |
| author_facet |
Liu, Jianming Liu, Xianlin Li, Chengming Wei, Hongyuan Guo, Yan Jiao, Chunmei Li, Zhiwei Xu, Xiaoqing Song, Huaping Yang, Shaoyan Zhu, Qinsen Wang, Zhanguo Yang, Anli Yang, Tieying Wang, Huanhua |
| author_sort |
Liu, Jianming |
| title |
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method |
| title_short |
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method |
| title_full |
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method |
| title_fullStr |
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method |
| title_full_unstemmed |
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method |
| title_sort |
investigation of cracks in gan films grown by combined hydride and metal organic vapor-phase epitaxial method |
| description |
Cracks appeared in GaN epitaxial layers which were grown by a novel method combining metal organic vapor-phase epitaxy (MOCVD) and hydride vapor-phase epitaxy (HVPE) in one chamber. The origin of cracks in a 22-μm thick GaN film was fully investigated by high-resolution X-ray diffraction (XRD), micro-Raman spectra, and scanning electron microscopy (SEM). Many cracks under the surface were first observed by SEM after etching for 10 min. By investigating the cross section of the sample with high-resolution micro-Raman spectra, the distribution of the stress along the depth was determined. From the interface of the film/substrate to the top surface of the film, several turnings were found. A large compressive stress existed at the interface. The stress went down as the detecting area was moved up from the interface to the overlayer, and it was maintained at a large value for a long depth area. Then it went down again, and it finally increased near the top surface. The cross-section of the film was observed after cleaving and etching for 2 min. It was found that the crystal quality of the healed part was nearly the same as the uncracked region. This indicated that cracking occurred in the growth, when the tensile stress accumulated and reached the critical value. Moreover, the cracks would heal because of high lateral growth rate. |
| publisher |
Springer |
| publishDate |
2011 |
| url |
https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212216/ |
| _version_ |
1611486428794978304 |