TEM assessment of As-doped GaN epitaxial layers grown on sapphire
TEM investigations of As-doped GaN layers grown by plasma-assisted molecular beam epitaxy on sapphire substrates reveal the presence of extensive regions of cubic stacking disorder within the hexagonal GaN matrix. Electron energy loss spectroscopy suggests the localization of As within grains immedi...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Book Section |
| Language: | English |
| Published: |
Institute of Physics Publishing
2004
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| Online Access: | http://eprints.nottingham.ac.uk/1442/ http://eprints.nottingham.ac.uk/1442/1/Inst._Phys._Conf._Ser._179_%282004%29_pp_23-26.pdf |