Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy

by Li, Zhiwei, Zhang, Biao, Wang, Jun, Liu, Jianming, Liu, Xianglin, Yang, Shaoyan, Zhu, Qinsheng, Wang, Zhanguo
Published 2011

Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy

by Jia, Caihong, Chen, Yonghai, Guo, Yan, Liu, Xianglin, Yang, Shaoyan, Zhang, Weifeng, Wang, Zhanguo
Published 2011

Control of epitaxial relationships of ZnO/SrTiO3 heterointerfaces by etching the substrate surface

by Jia, Caihong, Chen, Yonghai, Liu, Xianglin, Yang, Shaoyan, Zhang, Weifeng, Wang, Zhanguo
Published 2013

Anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using double AlN buffer layers

by Zhao, Guijuan, Wang, Lianshan, Yang, Shaoyan, Li, Huijie, Wei, Hongyuan, Han, Dongyue, Wang, Zhanguo
Published 2016

Competitive growth mechanisms of AlN on Si (111) by MOVPE

by Feng, Yuxia, Wei, Hongyuan, Yang, Shaoyan, Chen, Zhen, Wang, Lianshan, Kong, Susu, Zhao, Guijuan, Liu, Xianglin
Published 2014

Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates

by Li, Huijie, Zhao, Guijuan, Wei, Hongyuan, Wang, Lianshan, Chen, Zhen, Yang, Shaoyan
Published 2016

The immiscibility of InAlN ternary alloy

by Zhao, Guijuan, Xu, Xiaoqing, Li, Huijie, Wei, Hongyuan, Han, Dongyue, Ji, Zesheng, Meng, Yulin, Wang, Lianshan, Yang, Shaoyan
Published 2016

Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method

by Liu, Jianming, Liu, Xianlin, Li, Chengming, Wei, Hongyuan, Guo, Yan, Jiao, Chunmei, Li, Zhiwei, Xu, Xiaoqing, Song, Huaping, Yang, Shaoyan, Zhu, Qinsen, Wang, Zhanguo, Yang, Anli, Yang, Tieying, Wang, Huanhua
Published 2011