Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy

Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy

The valence band offset (VBO) of wurtzite indium nitride/strontium titanate (InN/SrTiO3) heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 1.26 ± 0.23 eV and the conduction band offset is deduced to be 1.30 ± 0.23 eV, indicating the heterojunc...

Full description

Bibliographic Details
Main Authors: Li, Zhiwei, Zhang, Biao, Wang, Jun, Liu, Jianming, Liu, Xianglin, Yang, Shaoyan, Zhu, Qinsheng, Wang, Zhanguo
Format: Online
Language:English
Published: Springer 2011
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211249/

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211249/

Similar Items