Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications
GaN wires are grown on a Si (111) substrate by metal organic vapour-phase epitaxy on a thin deposited AlN blanket and through a thin SiNx layer formed spontaneously at the AlN/Si interface. N-doped wires are used as templates for the growth of core-shell InGaN/GaN multiple quantum wells coated by a...
| Main Authors: | , , , , , , |
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| Format: | Online |
| Language: | English |
| Published: |
Springer
2013
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3576259/ |