Anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using double AlN buffer layers

We report the anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer lay...

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Bibliographic Details
Main Authors: Zhao, Guijuan, Wang, Lianshan, Yang, Shaoyan, Li, Huijie, Wei, Hongyuan, Han, Dongyue, Wang, Zhanguo
Format: Online
Language:English
Published: Nature Publishing Group 2016
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4748300/