Two-photon photoluminescence induced defects on InGaN crystal and light emitting diodes
Two-photon excitation techniques used in fabricating lines defects were done on a light emitting diode chip. Simultaneous detection of a quenched wide-gap semiconductor crystal has been observed using single- and two-photon photoluminescence. It was found at the quenched area, single-photon excitati...
Main Authors: | Muhammad Noor, Ahmad Shukri, Zainal Abidin, Mohd Shahnan, Kawata, Yoshimasa |
---|---|
Format: | Conference or Workshop Item |
Language: | English |
Published: |
IEEE
2010
|
Online Access: | http://psasir.upm.edu.my/id/eprint/47791/ http://psasir.upm.edu.my/id/eprint/47791/ http://psasir.upm.edu.my/id/eprint/47791/1/Two-photon%20photoluminescence%20induced%20defects%20on%20InGaN%20crystal%20and%20light%20emitting%20diodes.pdf |
Similar Items
-
Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots
by: Li, Hongjian, et al.
Published: (2016) -
Asymmetric tunneling model of forward leakage current in GaN/InGaN light emitting diodes
by: Ting Zhi, et al.
Published: (2015-08-01) -
Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes
by: Matteo Meneghini, et al.
Published: (2015-10-01) -
Overshoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodes
by: Yang Huang, et al.
Published: (2016-04-01) -
The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes
by: Tsai, Ming-Ta, et al.
Published: (2014)