Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN
We fabricated GaN-based light-emitting diodes (LEDs) without pre-activation of p-type GaN. During the fabrication process, a 100-nm-thick indium tin oxide film was served as the p-type contact layer and annealed at 500°C in N2 ambient for 20 min to increase its transparency as well as to activate th...
| Main Authors: | , , |
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| Format: | Online |
| Language: | English |
| Published: |
Springer US
2015
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385135/ |