Performance of InGaN/GaN Light Emitting Diodes with n-GaN Layer Embedded with SiO2 Nano-Particles

Performance of InGaN/GaN Light Emitting Diodes with n-GaN Layer Embedded with SiO2 Nano-Particles

We demonstrate high-performance InGaN/GaN blue light emitting diodes (LEDs) embedded with an air-void layer produced by a dry-etch of nano-pillars in an n-GaN layer grown on patterned sapphire substrate (PSS), filling the space between nano-pillars with SiO2 nano-particles (NPs) and subsequent epita...

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Bibliographic Details
Main Authors: Hong-Seo Yom, Jin-Kyu Yang, Alexander Y. Polyakov, In-Hwan Lee
Format: Article
Language:English
Published: MDPI AG 2018-09-01
Series:Applied Sciences
Subjects:
nano-pillars
nano-particles
light extraction efficiency
internal quantum efficiency
finite-difference time-domain method
Online Access:http://www.mdpi.com/2076-3417/8/9/1574

Internet

http://www.mdpi.com/2076-3417/8/9/1574

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