Compositional and structural characterization of heterostructure InGaN-based light-emitting diode by high resolution x-ray diffraction
This paper focuses on the compositional and structural characterization of InGaN-based light-emitting diode (LED) using high resolution x-ray diffraction (HRXRD) system. The LED was epitaxially grown on Si (111) substrate that comprises of In0.11Ga0.89N multi-quantum-well (MQW) active layer. Phase a...
| Main Authors: | , , , |
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| Format: | Article |
| Published: |
Trans Tech Publications
2013
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| Online Access: | DOI:10.4028/www.scientific.net/AMR.620.22 DOI:10.4028/www.scientific.net/AMR.620.22 |