Two-photon photoluminescence induced defects on InGaN crystal and light emitting diodes

Two-photon photoluminescence induced defects on InGaN crystal and light emitting diodes

Two-photon excitation techniques used in fabricating lines defects were done on a light emitting diode chip. Simultaneous detection of a quenched wide-gap semiconductor crystal has been observed using single- and two-photon photoluminescence. It was found at the quenched area, single-photon excitati...

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Main Authors: Muhammad Noor, Ahmad Shukri, Zainal Abidin, Mohd Shahnan, Kawata, Yoshimasa
Format: Conference or Workshop Item
Language:English
Published: IEEE 2010
Online Access:http://psasir.upm.edu.my/id/eprint/47791/
http://psasir.upm.edu.my/id/eprint/47791/
http://psasir.upm.edu.my/id/eprint/47791/1/Two-photon%20photoluminescence%20induced%20defects%20on%20InGaN%20crystal%20and%20light%20emitting%20diodes.pdf
id upm-47791
recordtype eprints
spelling upm-477912016-07-15T08:43:56Z http://psasir.upm.edu.my/id/eprint/47791/ Two-photon photoluminescence induced defects on InGaN crystal and light emitting diodes Muhammad Noor, Ahmad Shukri Zainal Abidin, Mohd Shahnan Kawata, Yoshimasa Two-photon excitation techniques used in fabricating lines defects were done on a light emitting diode chip. Simultaneous detection of a quenched wide-gap semiconductor crystal has been observed using single- and two-photon photoluminescence. It was found at the quenched area, single-photon excitation gives photoluminescence read-out compared to two-photon excitation which no photoluminescence detected at the bandgap wavelength. This is due to the excitation states which the transition of electron for two-photon excitation to occur have been demolished by the annealing of the sample which involved two-photon quenching process. The dependency of excitation power with respective photoluminescence is elaborated to confirmed the single- and two-photon excitation photoluminescence methods. IEEE 2010 Conference or Workshop Item PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/47791/1/Two-photon%20photoluminescence%20induced%20defects%20on%20InGaN%20crystal%20and%20light%20emitting%20diodes.pdf Muhammad Noor, Ahmad Shukri and Zainal Abidin, Mohd Shahnan and Kawata, Yoshimasa (2010) Two-photon photoluminescence induced defects on InGaN crystal and light emitting diodes. In: 1st International Conference on Photonics 2010 (ICP 2010), 5-7 July 2010, Langkawi, Kedah. . 10.1109/ICP.2010.5604436
repository_type Digital Repository
institution_category Local University
institution Universiti Putra Malaysia
building UPM Institutional Repository
collection Online Access
language English
description Two-photon excitation techniques used in fabricating lines defects were done on a light emitting diode chip. Simultaneous detection of a quenched wide-gap semiconductor crystal has been observed using single- and two-photon photoluminescence. It was found at the quenched area, single-photon excitation gives photoluminescence read-out compared to two-photon excitation which no photoluminescence detected at the bandgap wavelength. This is due to the excitation states which the transition of electron for two-photon excitation to occur have been demolished by the annealing of the sample which involved two-photon quenching process. The dependency of excitation power with respective photoluminescence is elaborated to confirmed the single- and two-photon excitation photoluminescence methods.
format Conference or Workshop Item
author Muhammad Noor, Ahmad Shukri
Zainal Abidin, Mohd Shahnan
Kawata, Yoshimasa
spellingShingle Muhammad Noor, Ahmad Shukri
Zainal Abidin, Mohd Shahnan
Kawata, Yoshimasa
Two-photon photoluminescence induced defects on InGaN crystal and light emitting diodes
author_facet Muhammad Noor, Ahmad Shukri
Zainal Abidin, Mohd Shahnan
Kawata, Yoshimasa
author_sort Muhammad Noor, Ahmad Shukri
title Two-photon photoluminescence induced defects on InGaN crystal and light emitting diodes
title_short Two-photon photoluminescence induced defects on InGaN crystal and light emitting diodes
title_full Two-photon photoluminescence induced defects on InGaN crystal and light emitting diodes
title_fullStr Two-photon photoluminescence induced defects on InGaN crystal and light emitting diodes
title_full_unstemmed Two-photon photoluminescence induced defects on InGaN crystal and light emitting diodes
title_sort two-photon photoluminescence induced defects on ingan crystal and light emitting diodes
publisher IEEE
publishDate 2010
url http://psasir.upm.edu.my/id/eprint/47791/
http://psasir.upm.edu.my/id/eprint/47791/
http://psasir.upm.edu.my/id/eprint/47791/1/Two-photon%20photoluminescence%20induced%20defects%20on%20InGaN%20crystal%20and%20light%20emitting%20diodes.pdf
first_indexed 2018-09-07T17:39:09Z
last_indexed 2018-09-07T17:39:09Z
_version_ 1610971296714194944

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