InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers
InGaN/GaN multilayer quantum dot (QD) structure is a potential type of active regions for yellow-green light-emitting diodes (LEDs). The surface morphologies and crystalline quality of GaN barriers are critical to the uniformity of InGaN QD layers. While GaN barriers were grown in multi-QD layers, w...
| Main Authors: | , , , , |
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| Format: | Online |
| Language: | English |
| Published: |
Springer
2012
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3570386/ |