Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering
InGaN-based light-emitting diodes (LEDs) have been widely accepted as highly efficient light sources capable of replacing incandescent bulbs. However, applications of InGaN LEDs are limited to small devices because their fabrication process involves expensive epitaxial growth of InGaN by metalorgani...
| Main Authors: | , , , , |
|---|---|
| Format: | Online |
| Language: | English |
| Published: |
Nature Publishing Group
2014
|
| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4066259/ |