Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes

Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes

Carrier localization phenomena in indium-rich InGaN/GaN multiple quantum wells (MQWs) grown on sapphire and GaN substrates were investigated. Temperature-dependent photoluminescence (PL) spectroscopy, ultraviolet near-field scanning optical microscopy (NSOM), and confocal time-resolved PL (TRPL) spe...

Full description

Bibliographic Details
Main Authors: Jeong, Hyun, Jeong, Hyeon Jun, Oh, Hye Min, Hong, Chang-Hee, Suh, Eun-Kyung, Lerondel, Gilles, Jeong, Mun Seok
Format: Online
Language:English
Published: Nature Publishing Group 2015
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4366764/

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4366764/

Similar Items