Effects of annealing on the electro-optical properties of a-Si:H thin films deposited by D.C. and pulsed PECVD
Hydrogenated amorphous silicon thin films studied in this work were prepared by d.c. and pulsed PECVD technique at a fixe d silane flow-rates of 10 sc cm and 40 sccm. The deposition temperature, pressure and power were fixed at 200 degree Celsius, 0.45 mbar and 1.4 W respectively. The pulsed PECVD s...
| Main Authors: | , , |
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| Format: | Article |
| Published: |
2004
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| Subjects: | |
| Online Access: | http://eprints.um.edu.my/7345/ http://eprints.um.edu.my/7345/1/Effects_of_annealing_on_the_electro%2Doptical_properties_of_a%2DSiH_thin_films_deposited_by_D.C._and_pulsed_PECVD.pdf |