Direct growth of freestanding GaN on C-face SiC by HVPE
In this work, high quality GaN crystal was successfully grown on C-face 6H-SiC by HVPE using a two steps growth process. Due to the small interaction stress between the GaN and the SiC substrate, the GaN was self-separated from the SiC substrate even with a small thickness of about 100 μm. Moreover,...
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| Format: | Online |
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Nature Publishing Group
2015
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4451798/ |
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pubmed-44517982015-06-09 Direct growth of freestanding GaN on C-face SiC by HVPE Tian, Yuan Shao, Yongliang Wu, Yongzhong Hao, Xiaopeng Zhang, Lei Dai, Yuanbin Huo, Qin Article In this work, high quality GaN crystal was successfully grown on C-face 6H-SiC by HVPE using a two steps growth process. Due to the small interaction stress between the GaN and the SiC substrate, the GaN was self-separated from the SiC substrate even with a small thickness of about 100 μm. Moreover, the SiC substrate was excellent without damage after the whole process so that it can be repeatedly used in the GaN growth. Hot phosphoric acid etching (at 240 °C for 30 min) was employed to identify the polarity of the GaN layer. According to the etching results, the obtained layer was Ga-polar GaN. High-resolution X-ray diffraction (HRXRD) and electron backscatter diffraction (EBSD) were done to characterize the quality of the freestanding GaN. The Raman measurements showed that the freestanding GaN film grown on the C-face 6H-SiC was stress-free. The optical properties of the freestanding GaN layer were determined by photoluminescence (PL) spectra. Nature Publishing Group 2015-06-02 /pmc/articles/PMC4451798/ /pubmed/26034939 http://dx.doi.org/10.1038/srep10748 Text en Copyright © 2015, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
| repository_type |
Open Access Journal |
| institution_category |
Foreign Institution |
| institution |
US National Center for Biotechnology Information |
| building |
NCBI PubMed |
| collection |
Online Access |
| language |
English |
| format |
Online |
| author |
Tian, Yuan Shao, Yongliang Wu, Yongzhong Hao, Xiaopeng Zhang, Lei Dai, Yuanbin Huo, Qin |
| spellingShingle |
Tian, Yuan Shao, Yongliang Wu, Yongzhong Hao, Xiaopeng Zhang, Lei Dai, Yuanbin Huo, Qin Direct growth of freestanding GaN on C-face SiC by HVPE |
| author_facet |
Tian, Yuan Shao, Yongliang Wu, Yongzhong Hao, Xiaopeng Zhang, Lei Dai, Yuanbin Huo, Qin |
| author_sort |
Tian, Yuan |
| title |
Direct growth of freestanding GaN on C-face SiC by HVPE |
| title_short |
Direct growth of freestanding GaN on C-face SiC by HVPE |
| title_full |
Direct growth of freestanding GaN on C-face SiC by HVPE |
| title_fullStr |
Direct growth of freestanding GaN on C-face SiC by HVPE |
| title_full_unstemmed |
Direct growth of freestanding GaN on C-face SiC by HVPE |
| title_sort |
direct growth of freestanding gan on c-face sic by hvpe |
| description |
In this work, high quality GaN crystal was successfully grown on C-face 6H-SiC by HVPE using a two steps growth process. Due to the small interaction stress between the GaN and the SiC substrate, the GaN was self-separated from the SiC substrate even with a small thickness of about 100 μm. Moreover, the SiC substrate was excellent without damage after the whole process so that it can be repeatedly used in the GaN growth. Hot phosphoric acid etching (at 240 °C for 30 min) was employed to identify the polarity of the GaN layer. According to the etching results, the obtained layer was Ga-polar GaN. High-resolution X-ray diffraction (HRXRD) and electron backscatter diffraction (EBSD) were done to characterize the quality of the freestanding GaN. The Raman measurements showed that the freestanding GaN film grown on the C-face 6H-SiC was stress-free. The optical properties of the freestanding GaN layer were determined by photoluminescence (PL) spectra. |
| publisher |
Nature Publishing Group |
| publishDate |
2015 |
| url |
https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4451798/ |
| _version_ |
1613230456455561216 |