Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate

Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate

GaN crystals without cracks were successfully grown on a MOCVD-GaN/6H-SiC (MGS) substrate with a low V/III ratio of 20 at initial growth. With a high V/III ratio of 80 at initial growth, opaque GaN polycrystals were obtained. The structural analysis and optical characterization reveal that stress ha...

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Bibliographic Details
Main Authors: Zhang, Lei, Yu, Jiaoxian, Hao, Xiaopeng, Wu, Yongzhong, Dai, Yuanbin, Shao, Yongliang, Zhang, Haodong, Tian, Yuan
Format: Online
Language:English
Published: Nature Publishing Group 2014
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3935196/

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https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3935196/

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