Static and dynamic TSEPs of SiC and GaN transistors
This paper investigates the static and dynamic temperature sensitive electrical parameters (TSEPs) for both SiC and GaN transistors. It is shown that both the qualitative and quantitative temperature characteristics of these parameters are various when different type of transistors are concerned. Th...
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2018
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| Online Access: | http://eprints.nottingham.ac.uk/51429/ http://eprints.nottingham.ac.uk/51429/1/Static%20and%20dynamic%20TSEPs%20of%20SiC%20and%20GaN%20Transistors.pdf |