Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes

Carrier localization phenomena in indium-rich InGaN/GaN multiple quantum wells (MQWs) grown on sapphire and GaN substrates were investigated. Temperature-dependent photoluminescence (PL) spectroscopy, ultraviolet near-field scanning optical microscopy (NSOM), and confocal time-resolved PL (TRPL) spe...

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Main Authors:	Jeong, Hyun, Jeong, Hyeon Jun, Oh, Hye Min, Hong, Chang-Hee, Suh, Eun-Kyung, Lerondel, Gilles, Jeong, Mun Seok
Format:	Online
Language:	English
Published:	Nature Publishing Group 2015
Online Access:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4366764/

id	pubmed-4366764
recordtype	oai_dc
spelling	pubmed-43667642015-03-31 Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes Jeong, Hyun Jeong, Hyeon Jun Oh, Hye Min Hong, Chang-Hee Suh, Eun-Kyung Lerondel, Gilles Jeong, Mun Seok Article Carrier localization phenomena in indium-rich InGaN/GaN multiple quantum wells (MQWs) grown on sapphire and GaN substrates were investigated. Temperature-dependent photoluminescence (PL) spectroscopy, ultraviolet near-field scanning optical microscopy (NSOM), and confocal time-resolved PL (TRPL) spectroscopy were employed to verify the correlation between carrier localization and crystal quality. From the spatially resolved PL measurements, we observed that the distribution and shape of luminescent clusters, which were known as an outcome of the carrier localization, are strongly affected by the crystalline quality. Spectroscopic analysis of the NSOM signal shows that carrier localization of MQWs with low crystalline quality is different from that of MQWs with high crystalline quality. This interrelation between carrier localization and crystal quality is well supported by confocal TRPL results. Nature Publishing Group 2015-03-20 /pmc/articles/PMC4366764/ /pubmed/25792246 http://dx.doi.org/10.1038/srep09373 Text en Copyright © 2015, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
repository_type	Open Access Journal
institution_category	Foreign Institution
institution	US National Center for Biotechnology Information
building	NCBI PubMed
collection	Online Access
language	English
format	Online
author	Jeong, Hyun Jeong, Hyeon Jun Oh, Hye Min Hong, Chang-Hee Suh, Eun-Kyung Lerondel, Gilles Jeong, Mun Seok
spellingShingle	Jeong, Hyun Jeong, Hyeon Jun Oh, Hye Min Hong, Chang-Hee Suh, Eun-Kyung Lerondel, Gilles Jeong, Mun Seok Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes
author_facet	Jeong, Hyun Jeong, Hyeon Jun Oh, Hye Min Hong, Chang-Hee Suh, Eun-Kyung Lerondel, Gilles Jeong, Mun Seok
author_sort	Jeong, Hyun
title	Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes
title_short	Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes
title_full	Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes
title_fullStr	Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes
title_full_unstemmed	Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes
title_sort	carrier localization in in-rich ingan/gan multiple quantum wells for green light-emitting diodes
description	Carrier localization phenomena in indium-rich InGaN/GaN multiple quantum wells (MQWs) grown on sapphire and GaN substrates were investigated. Temperature-dependent photoluminescence (PL) spectroscopy, ultraviolet near-field scanning optical microscopy (NSOM), and confocal time-resolved PL (TRPL) spectroscopy were employed to verify the correlation between carrier localization and crystal quality. From the spatially resolved PL measurements, we observed that the distribution and shape of luminescent clusters, which were known as an outcome of the carrier localization, are strongly affected by the crystalline quality. Spectroscopic analysis of the NSOM signal shows that carrier localization of MQWs with low crystalline quality is different from that of MQWs with high crystalline quality. This interrelation between carrier localization and crystal quality is well supported by confocal TRPL results.
publisher	Nature Publishing Group
publishDate	2015
url	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4366764/
_version_	1613201155428450304

Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes

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