Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD

Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD

With an appropriate high anneal temperature under H2 atmosphere, GaN quantum dots (QDs) have been fabricated via GaN thermal decomposition in metal organic chemical vapor deposition (MOCVD). Based on the characterization of atomic force microscopy (AFM), the obtained GaN QDs show good size distribut...

Full description

Bibliographic Details
Main Authors: Zhang, Jin, Li, Senlin, Xiong, Hui, Tian, Wu, Li, Yang, Fang, Yanyan, Wu, Zhihao, Dai, Jiangnan, Xu, Jintong, Li, Xiangyang, Chen, Changqing
Format: Online
Language:English
Published: Springer 2014
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4128446/
id pubmed-4128446
recordtype oai_dc
spelling pubmed-41284462014-08-18 Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD Zhang, Jin Li, Senlin Xiong, Hui Tian, Wu Li, Yang Fang, Yanyan Wu, Zhihao Dai, Jiangnan Xu, Jintong Li, Xiangyang Chen, Changqing Nano Express With an appropriate high anneal temperature under H2 atmosphere, GaN quantum dots (QDs) have been fabricated via GaN thermal decomposition in metal organic chemical vapor deposition (MOCVD). Based on the characterization of atomic force microscopy (AFM), the obtained GaN QDs show good size distribution and have a low density of 2.4 × 108 cm-2. X-ray photoelectron spectroscopy (XPS) analysis demonstrates that the GaN QDs were formed without Ga droplets by thermal decomposition of GaN. Springer 2014-07-09 /pmc/articles/PMC4128446/ /pubmed/25136276 http://dx.doi.org/10.1186/1556-276X-9-341 Text en Copyright © 2014 Zhang et al.; licensee Springer. http://creativecommons.org/licenses/by/4.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.
repository_type Open Access Journal
institution_category Foreign Institution
institution US National Center for Biotechnology Information
building NCBI PubMed
collection Online Access
language English
format Online
author Zhang, Jin
Li, Senlin
Xiong, Hui
Tian, Wu
Li, Yang
Fang, Yanyan
Wu, Zhihao
Dai, Jiangnan
Xu, Jintong
Li, Xiangyang
Chen, Changqing
spellingShingle Zhang, Jin
Li, Senlin
Xiong, Hui
Tian, Wu
Li, Yang
Fang, Yanyan
Wu, Zhihao
Dai, Jiangnan
Xu, Jintong
Li, Xiangyang
Chen, Changqing
Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD
author_facet Zhang, Jin
Li, Senlin
Xiong, Hui
Tian, Wu
Li, Yang
Fang, Yanyan
Wu, Zhihao
Dai, Jiangnan
Xu, Jintong
Li, Xiangyang
Chen, Changqing
author_sort Zhang, Jin
title Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD
title_short Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD
title_full Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD
title_fullStr Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD
title_full_unstemmed Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD
title_sort fabrication of low-density gan/aln quantum dots via gan thermal decomposition in mocvd
description With an appropriate high anneal temperature under H2 atmosphere, GaN quantum dots (QDs) have been fabricated via GaN thermal decomposition in metal organic chemical vapor deposition (MOCVD). Based on the characterization of atomic force microscopy (AFM), the obtained GaN QDs show good size distribution and have a low density of 2.4 × 108 cm-2. X-ray photoelectron spectroscopy (XPS) analysis demonstrates that the GaN QDs were formed without Ga droplets by thermal decomposition of GaN.
publisher Springer
publishDate 2014
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4128446/
_version_ 1613122997861744640

Similar Items