High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability

High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability

High internal efficiency and high temperature stability ultraviolet (UV) light-emitting diodes (LEDs) at 308 nm were achieved using high density (2.5 × 109 cm−2) GaN/AlN quantum dots (QDs) grown by MOVPE. Photoluminescence shows the characteristic behaviors of QDs: nearly constant linewidth and emis...

Full description

Bibliographic Details
Main Authors: Yang, Weihuang, Li, Jinchai, Zhang, Yong, Huang, Po-Kai, Lu, Tien-Chang, Kuo, Hao-Chung, Li, Shuping, Yang, Xu, Chen, Hangyang, Liu, Dayi, Kang, Junyong
Format: Online
Language:English
Published: Nature Publishing Group 2014
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4046137/

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4046137/

Similar Items