Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD

Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD

With an appropriate high anneal temperature under H2 atmosphere, GaN quantum dots (QDs) have been fabricated via GaN thermal decomposition in metal organic chemical vapor deposition (MOCVD). Based on the characterization of atomic force microscopy (AFM), the obtained GaN QDs show good size distribut...

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Bibliographic Details
Main Authors: Zhang, Jin, Li, Senlin, Xiong, Hui, Tian, Wu, Li, Yang, Fang, Yanyan, Wu, Zhihao, Dai, Jiangnan, Xu, Jintong, Li, Xiangyang, Chen, Changqing
Format: Online
Language:English
Published: Springer 2014
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4128446/

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https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4128446/

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