Theoretical and experimental studies of (In,Ga)As/GaP quantum dots

Theoretical and experimental studies of (In,Ga)As/GaP quantum dots

(In,Ga)As/GaP(001) quantum dots (QDs) are grown by molecular beam epitaxy and studied both theoretically and experimentally. The electronic band structure is simulated using a combination of k·p and tight-binding models. These calculations predict an indirect to direct crossover with the In content...

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Bibliographic Details
Main Authors: Robert, Cedric, Thanh, Tra Nguyen, Cornet, Charles, Turban, Pascal, Perrin, Mathieu, Balocchi, Andrea, Folliot, Herve, Bertru, Nicolas, Pedesseau, Laurent, Nestoklon, Mikhail O, Even, Jacky, Jancu, Jean-Marc, Tricot, Sylvain, Durand, Olivier, Marie, Xavier, Le Corre, Alain
Format: Online
Language:English
Published: Springer 2012
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3511258/
Description
Summary:(In,Ga)As/GaP(001) quantum dots (QDs) are grown by molecular beam epitaxy and studied both theoretically and experimentally. The electronic band structure is simulated using a combination of k·p and tight-binding models. These calculations predict an indirect to direct crossover with the In content and the size of the QDs. The optical properties are then studied in a low-In-content range through photoluminescence and time-resolved photoluminescence experiments. It suggests the proximity of two optical transitions of indirect and direct types.

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