Theoretical and experimental studies of (In,Ga)As/GaP quantum dots
(In,Ga)As/GaP(001) quantum dots (QDs) are grown by molecular beam epitaxy and studied both theoretically and experimentally. The electronic band structure is simulated using a combination of k·p and tight-binding models. These calculations predict an indirect to direct crossover with the In content...
Main Authors: | , , , , , , , , , , , , , , , |
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Format: | Online |
Language: | English |
Published: |
Springer
2012
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Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3511258/ |