Investigation of GaInAs strain reducing layer combined with InAs quantum dots embedded in Ga(In)As subcell of triple junction GaInP/Ga(In)As/Ge solar cell

Investigation of GaInAs strain reducing layer combined with InAs quantum dots embedded in Ga(In)As subcell of triple junction GaInP/Ga(In)As/Ge solar cell

The InAs/GaAs quantum dots structure embedded in GaInP/Ga(In)As/Ge triple junction solar cell with and without Ga0.90In0.10As strain reducing layer was investigated. Conversion efficiency of 33.91% at 1,000 suns AM 1.5D with Ga0.90In0.10As strain reducing layer was demonstrated. A 1.19% improvement...

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Bibliographic Details
Main Authors: Li, Senlin, Bi, Jingfeng, Li, Mingyang, Yang, Meijia, Song, Minghui, Liu, Guanzhou, Xiong, Weiping, Li, Yang, Fang, Yanyan, Chen, Changqing, Lin, Guijiang, Chen, Wenjun, Wu, Chaoyu, Wang, Duxiang
Format: Online
Language:English
Published: Springer US 2015
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385240/

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https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4385240/

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