Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for a III–V photonics platform on silicon using a laboratory X-ray diffraction setup1

Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for a III–V photonics platform on silicon using a laboratory X-ray diffraction setup1

A laboratory X-ray diffraction setup is reported, which allows quantitative characterization of the microtwin and antiphase domain densities in epitaxial GaP/Si thin layers.

Bibliographic Details
Main Authors: Ping Wang, Yan, Letoublon, Antoine, Nguyen Thanh, Tra, Bahri, Mounib, Largeau, Ludovic, Patriarche, Gilles, Cornet, Charles, Bertru, Nicolas, Le Corre, Alain, Durand, Olivier
Format: Online
Language:English
Published: International Union of Crystallography 2015
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4453976/

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4453976/

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