Temperature dependent optical properties of single, hierarchically self-assembled GaAs/AlGaAs quantum dots
We report on the experimental observation of bright photoluminescence emission at room temperature from single unstrained GaAs quantum dots (QDs). The linewidth of a single-QD ground-state emission (≈ 8.5 meV) is comparable to the ensemble inhomogeneous broadening (≈ 12.4 meV). At low temperature (T...
Main Authors: | Benyoucef, M, Rastelli, A, Schmidt, OG, Ulrich, SM, Michler, P |
---|---|
Format: | Online |
Language: | English |
Published: |
Springer
2006
|
Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3246675/ |
Similar Items
-
Multi-scale ordering of self-assembled InAs/GaAs(001) quantum dots
by: Kiravittaya, S, et al.
Published: (2006) -
Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells
by: Hu, Changcheng, et al.
Published: (2011) -
Micro-photoluminescence of GaAs/AlGaAs triple concentric quantum rings
by: Abbarchi, Marco, et al.
Published: (2011) -
Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells
by: Jo, Masafumi, et al.
Published: (2011) -
Optical properties of GaAs/AlGaAs DBR mirror for optoelectronics devices
by: Husna Zayadi
Published: (2004)