Spin polarization of carriers in InGaAs self-assembled quantum rings inserted in GaAs-AlGaAs resonant tunneling devices
In this work, we have investigated transport and polarization resolved photoluminescence (PL) of n-type GaAs-AlGaAs resonant tunneling diodes (RTDs) containing a layer of InGaAs self-assembled quantum rings (QRs) in the quantum well (QW). All measurements were performed under applied voltage, magnet...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Springer
2017
|
| Online Access: | http://eprints.nottingham.ac.uk/41566/ http://eprints.nottingham.ac.uk/41566/ http://eprints.nottingham.ac.uk/41566/ http://eprints.nottingham.ac.uk/41566/1/17_Gordo%20%282%29.pdf |