Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature
The authors report single-photon emission from InGaAs quantum dots grown by droplet epitaxy on (100) GaAs substrates using a solid-source molecular beam epitaxy system at elevated substrate temperatures above 400°C without post-growth annealing. High-resolution micro-photoluminescence spectroscopy e...
| Main Authors: | , , , , , , |
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| Format: | Online |
| Language: | English |
| Published: |
Springer
2012
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3494552/ |