Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells
We study the effects of low-temperature capping (200-450°C) on the optical properties of GaAs/AlGaAs quantum wells. Photoluminescence measurements clearly show the formation of abundant nonradiative recombination centers in an AlGaAs capping layer grown at 200°C, while there is a slight degradation...
| Main Authors: | , , , |
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| Format: | Online |
| Language: | English |
| Published: |
Springer
2011
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212224/ |