Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy

X-ray photoelectron spectroscopy has been used to measure the valence band offset of the InN/BaTiO3 heterojunction. It is found that a type-I band alignment forms at the interface. The valence band offset (VBO) and conduction band offset (CBO) are determined to be 2.25 ± 0.09 and 0.15 ± 0.09 eV, res...

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Bibliographic Details
Main Authors: Jia, Caihong, Chen, Yonghai, Guo, Yan, Liu, Xianglin, Yang, Shaoyan, Zhang, Weifeng, Wang, Zhanguo
Format: Online
Language:English
Published: Springer 2011
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211403/