Application of Taguchi Method in Optimization of Gate Oxide and Silicide Thickness for 45nm NMOS Device
The optimization of 45nm NMOS device was studied using Taguchi Method. This method was used to analyze the experimental data in order to get the optimum results. In this paper, there are four factors were varied for 3 levels to perform 9 experiments. Silicide on the poly-Si gate electrode was us...
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IJENS Publishers
2009
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| Online Access: | http://www.ijens.org/index.htm http://www.ijens.org/index.htm http://eprints.utem.edu.my/3792/1/%28J1%29_97010-0404_IJET-IJENS.pdf |