Impact of SALICIDE and Source/Drain Implants on Leakage Current and Sheet Resistance in 45nm NMOS Device
In this paper, we investigate the impact of Source/Drain (S/D) implant and salicide on poly sheet resistance (RS) and leakage current (ILeak) in 45nm NMOS device performance. The experimental studies were conducted under varying four process parameters, namely Halo implant, Source/Drain Implant, O...
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| Format: | Article |
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Universiti Teknikal Malaysia Melaka
2010
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| Online Access: | http://jtec.utem.edu.my http://jtec.utem.edu.my http://eprints.utem.edu.my/3777/1/%28J2%29_JTEC_2%281%29_36-41_zie.pdf |