Influence of HALO and Source/Drain Implantation on Threshold Voltage in 45nm PMOS Device

In this paper, we investigate the influence of process parameters like HALO and Source/Drain (S/D) Implantation on threshold voltage in 45nm PMOS device. The settings of process parameters were determined by using Taguchi experimental design method. The level of importance of the process paramete...

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Bibliographic Details
Main Author: Fauziyah, Salehuddin
Format: Article
Published: International Network for Scientific Information Publication (INSI) 2011
Subjects:
Online Access:http://www.ajbasweb.com/
http://www.ajbasweb.com/
http://eprints.utem.edu.my/3797/1/%28J5%29_AJBAS_5%281%29_55-61.pdf