Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN

Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN

Growth conditions have a tremendous impact on the unintentional background impurity concentration in gallium nitride (GaN) synthesized by molecular beam epitaxy and its resulting chemical and physical properties. In particular for oxygen identified as the dominant background impurity we demonstrate...

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Main Authors: Schubert, Felix, Wirth, Steffen, Zimmermann, Friederike, Heitmann, Johannes, Mikolajick, Thomas, Schmult, Stefan
Format: Online
Language:English
Published: Taylor & Francis 2016
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5101906/
id pubmed-5101906
recordtype oai_dc
spelling pubmed-51019062016-11-22 Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN Schubert, Felix Wirth, Steffen Zimmermann, Friederike Heitmann, Johannes Mikolajick, Thomas Schmult, Stefan Optical, Magnetic and Electronic Device Materials Growth conditions have a tremendous impact on the unintentional background impurity concentration in gallium nitride (GaN) synthesized by molecular beam epitaxy and its resulting chemical and physical properties. In particular for oxygen identified as the dominant background impurity we demonstrate that under optimized growth stoichiometry the growth temperature is the key parameter to control its incorporation and that an increase by 55 °C leads to an oxygen reduction by one order of magnitude. Quantitatively this reduction and the resulting optical and electrical properties are analyzed by secondary ion mass spectroscopy, photoluminescence, capacitance versus voltage measurements, low temperature magneto-transport and parasitic current paths in lateral transistor test structures based on two-dimensional electron gases. At a growth temperature of 665 °C the residual charge carrier concentration is decreased to below 1015 cm−3, resulting in insulating behavior and thus making the material suitable for beyond state-of-the-art device applications. Taylor & Francis 2016-05-16 /pmc/articles/PMC5101906/ /pubmed/27877874 http://dx.doi.org/10.1080/14686996.2016.1178565 Text en © 2016 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group http://creativecommons.org/licenses/by/4.0/ This is an Open Access article distributed under the terms of the Creative Commons Attribution License CC-BYhttp://creativecommons.org/licenses/by/4.0/which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
repository_type Open Access Journal
institution_category Foreign Institution
institution US National Center for Biotechnology Information
building NCBI PubMed
collection Online Access
language English
format Online
author Schubert, Felix
Wirth, Steffen
Zimmermann, Friederike
Heitmann, Johannes
Mikolajick, Thomas
Schmult, Stefan
spellingShingle Schubert, Felix
Wirth, Steffen
Zimmermann, Friederike
Heitmann, Johannes
Mikolajick, Thomas
Schmult, Stefan
Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN
author_facet Schubert, Felix
Wirth, Steffen
Zimmermann, Friederike
Heitmann, Johannes
Mikolajick, Thomas
Schmult, Stefan
author_sort Schubert, Felix
title Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN
title_short Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN
title_full Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN
title_fullStr Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN
title_full_unstemmed Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN
title_sort growth condition dependence of unintentional oxygen incorporation in epitaxial gan
description Growth conditions have a tremendous impact on the unintentional background impurity concentration in gallium nitride (GaN) synthesized by molecular beam epitaxy and its resulting chemical and physical properties. In particular for oxygen identified as the dominant background impurity we demonstrate that under optimized growth stoichiometry the growth temperature is the key parameter to control its incorporation and that an increase by 55 °C leads to an oxygen reduction by one order of magnitude. Quantitatively this reduction and the resulting optical and electrical properties are analyzed by secondary ion mass spectroscopy, photoluminescence, capacitance versus voltage measurements, low temperature magneto-transport and parasitic current paths in lateral transistor test structures based on two-dimensional electron gases. At a growth temperature of 665 °C the residual charge carrier concentration is decreased to below 1015 cm−3, resulting in insulating behavior and thus making the material suitable for beyond state-of-the-art device applications.
publisher Taylor & Francis
publishDate 2016
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5101906/
_version_ 1613719663438462976

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