Phonon transport control by nanoarchitecture including epitaxial Ge nanodots for Si-based thermoelectric materials
Phonon transport in Si films was controlled using epitaxially-grown ultrasmall Ge nanodots (NDs) with ultrahigh density for the purpose of developing Si-based thermoelectric materials. The Si/Ge ND stacked structures, which were formed by the ultrathin SiO2 film technique, exhibited lower thermal co...
| Main Authors: | , , , , |
|---|---|
| Format: | Online |
| Language: | English |
| Published: |
Nature Publishing Group
2015
|
| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4592960/ |