Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy

Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy

The surface morphology of Ge0.96Sn0.04/Si(100) heterostructures grown at temperatures from 250 to 450°C by atomic force microscopy (AFM) and scanning tunnel microscopy (STM) ex situ has been studied. The statistical data for the density of Ge0.96Sn0.04 nanodots (ND) depending on their lateral size h...

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Bibliographic Details
Main Authors: Mashanov, Vladimir, Ulyanov, Vladimir, Timofeev, Vyacheslav, Nikiforov, Aleksandr, Pchelyakov, Oleg, Yu, Ing-Song, Cheng, Henry
Format: Online
Language:English
Published: Springer 2011
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212234/

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https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3212234/

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