Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates

Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates

We report the study on formation and thermal annealing of InAs quantum dots grown by droplet epitaxy on GaAs (111)A surface. By following the changes in RHEED pattern, we found that InAs quantum dots arsenized at low temperature are lattice matched with GaAs substrate, becoming almost fully relaxed...

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Bibliographic Details
Main Authors:	Bietti, Sergio, Esposito, Luca, Fedorov, Alexey, Ballabio, Andrea, Martinelli, Andrea, Sanguinetti, Stefano
Format:	Online
Language:	English
Published:	Springer US 2015
Online Access:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4467813/

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