Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for a III–V photonics platform on silicon using a laboratory X-ray diffraction setup1
A laboratory X-ray diffraction setup is reported, which allows quantitative characterization of the microtwin and antiphase domain densities in epitaxial GaP/Si thin layers.
| Main Authors: | , , , , , , , , , |
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| Format: | Online |
| Language: | English |
| Published: |
International Union of Crystallography
2015
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4453976/ |