Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy

Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy

In this report, self-organized GaN nanodots have been grown on Si (111) by droplet epitaxy method, and their density can be controlled from 1.1 × 1010 to 1.1 × 1011 cm-2 by various growth parameters, such as substrate temperatures for Ga droplet formation, the pre-nitridation treatment of Si substra...

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Main Authors: Yu, Ing-Song, Chang, Chun-Pu, Yang, Chung-Pei, Lin, Chun-Ting, Ma, Yuan-Ron, Chen, Chun-Chi
Format: Online
Language:English
Published: Springer 2014
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4275119/
id pubmed-4275119
recordtype oai_dc
spelling pubmed-42751192015-01-15 Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy Yu, Ing-Song Chang, Chun-Pu Yang, Chung-Pei Lin, Chun-Ting Ma, Yuan-Ron Chen, Chun-Chi Nano Express In this report, self-organized GaN nanodots have been grown on Si (111) by droplet epitaxy method, and their density can be controlled from 1.1 × 1010 to 1.1 × 1011 cm-2 by various growth parameters, such as substrate temperatures for Ga droplet formation, the pre-nitridation treatment of Si substrate, the nitridation duration for GaN crystallization, and in situ annealing after GaN formation. Based on the characterization of in situ RHEED, we can observe the surface condition of Si and the formation of GaN nanodots on Si. The surface nitridaiton treatment at 600°C provides a-SiNx layer which makes higher density of GaN nanodots. Crystal GaN nanodots can be observed by the HRTEM. The surface composition of GaN nanodots can be analyzed by SPEM and μ-XPS with a synchrotron x-ray source. We can find GaN nanodots form by droplet epitaxy and then in situ annealing make higher-degree nitridation of GaN nanodots. Springer 2014-12-17 /pmc/articles/PMC4275119/ /pubmed/25593560 http://dx.doi.org/10.1186/1556-276X-9-682 Text en Copyright © 2014 Yu et al.; licensee Springer. http://creativecommons.org/licenses/by/4.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.
repository_type Open Access Journal
institution_category Foreign Institution
institution US National Center for Biotechnology Information
building NCBI PubMed
collection Online Access
language English
format Online
author Yu, Ing-Song
Chang, Chun-Pu
Yang, Chung-Pei
Lin, Chun-Ting
Ma, Yuan-Ron
Chen, Chun-Chi
spellingShingle Yu, Ing-Song
Chang, Chun-Pu
Yang, Chung-Pei
Lin, Chun-Ting
Ma, Yuan-Ron
Chen, Chun-Chi
Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy
author_facet Yu, Ing-Song
Chang, Chun-Pu
Yang, Chung-Pei
Lin, Chun-Ting
Ma, Yuan-Ron
Chen, Chun-Chi
author_sort Yu, Ing-Song
title Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy
title_short Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy
title_full Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy
title_fullStr Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy
title_full_unstemmed Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy
title_sort characterization and density control of gan nanodots on si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy
description In this report, self-organized GaN nanodots have been grown on Si (111) by droplet epitaxy method, and their density can be controlled from 1.1 × 1010 to 1.1 × 1011 cm-2 by various growth parameters, such as substrate temperatures for Ga droplet formation, the pre-nitridation treatment of Si substrate, the nitridation duration for GaN crystallization, and in situ annealing after GaN formation. Based on the characterization of in situ RHEED, we can observe the surface condition of Si and the formation of GaN nanodots on Si. The surface nitridaiton treatment at 600°C provides a-SiNx layer which makes higher density of GaN nanodots. Crystal GaN nanodots can be observed by the HRTEM. The surface composition of GaN nanodots can be analyzed by SPEM and μ-XPS with a synchrotron x-ray source. We can find GaN nanodots form by droplet epitaxy and then in situ annealing make higher-degree nitridation of GaN nanodots.
publisher Springer
publishDate 2014
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4275119/
_version_ 1613170204654698496

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