Simulation of High Performance Quantum Well GaN-based LED
The performance of quantum well GaN/A1GaN light emitting diode (LED) is reviewed for three different barrier compositions; symmetric barrier composition with low A1 content, asymmetric barrier composition with higher A1 content on p-type cladding layer and lower A1 content on n-type clading layer, a...
| Main Authors: | , , , |
|---|---|
| Format: | Conference or Workshop Item |
| Published: |
2005
|
| Subjects: | |
| Online Access: | http://eprints.usm.my/131/ http://eprints.usm.my/131/1/Stimulation_Of_High_Performance_quantum_well_GaN_%2DBased_Led.pdf |