Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures

The Au/DyMnO3/Nb:SrTiO3/Au stack was demonstrated to be not only a high performance memristor but also a good memcapacitor. The switching time is below 10 ns, the retention is longer than 105 s, and the change ratio of resistance (or capacitance) is larger than 100 over the 108 switching cycles. Mor...

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Main Authors:	Yan, Z. B., Liu, J. -M.
Format:	Online
Language:	English
Published:	Nature Publishing Group 2013
Online Access:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3748856/

id	pubmed-3748856
recordtype	oai_dc
spelling	pubmed-37488562013-08-21 Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures Yan, Z. B. Liu, J. -M. Article The Au/DyMnO3/Nb:SrTiO3/Au stack was demonstrated to be not only a high performance memristor but also a good memcapacitor. The switching time is below 10 ns, the retention is longer than 105 s, and the change ratio of resistance (or capacitance) is larger than 100 over the 108 switching cycles. Moreover, this stack has a broad range of intermediate states that are tunable by the operating voltages. It is indicated that the memory effects originate from the Nb:SrTiO3/Au junction where the barrier profile is electrically modulated. The serial connected Au/DyMnO3/Nb:SrTiO3 stack behaves as a high nonlinear resistor paralleling with a capacitor, which raises the capacitance change ratio and enhances the memory stability of the device. Nature Publishing Group 2013-08-21 /pmc/articles/PMC3748856/ /pubmed/23963467 http://dx.doi.org/10.1038/srep02482 Text en Copyright © 2013, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by-nc-nd/3.0/ This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/3.0/
repository_type	Open Access Journal
institution_category	Foreign Institution
institution	US National Center for Biotechnology Information
building	NCBI PubMed
collection	Online Access
language	English
format	Online
author	Yan, Z. B. Liu, J. -M.
spellingShingle	Yan, Z. B. Liu, J. -M. Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures
author_facet	Yan, Z. B. Liu, J. -M.
author_sort	Yan, Z. B.
title	Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures
title_short	Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures
title_full	Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures
title_fullStr	Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures
title_full_unstemmed	Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures
title_sort	coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures
description	The Au/DyMnO3/Nb:SrTiO3/Au stack was demonstrated to be not only a high performance memristor but also a good memcapacitor. The switching time is below 10 ns, the retention is longer than 105 s, and the change ratio of resistance (or capacitance) is larger than 100 over the 108 switching cycles. Moreover, this stack has a broad range of intermediate states that are tunable by the operating voltages. It is indicated that the memory effects originate from the Nb:SrTiO3/Au junction where the barrier profile is electrically modulated. The serial connected Au/DyMnO3/Nb:SrTiO3 stack behaves as a high nonlinear resistor paralleling with a capacitor, which raises the capacitance change ratio and enhances the memory stability of the device.
publisher	Nature Publishing Group
publishDate	2013
url	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3748856/
_version_	1612004623520890880

Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures

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