Coexistence of memory resistance and memory capacitance in TiO2 solid-state devices
This work exploits the coexistence of both resistance and capacitance memory effects in TiO2-based two-terminal cells. Our Pt/TiO2/TiO x /Pt devices exhibit an interesting combination of hysteresis and non-zero crossing in their current-voltage (I-V) characteristic that indicates the presence of cap...
| Main Authors: | , , , |
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| Format: | Online |
| Language: | English |
| Published: |
Springer
2014
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4189047/ |