Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures
The Au/DyMnO3/Nb:SrTiO3/Au stack was demonstrated to be not only a high performance memristor but also a good memcapacitor. The switching time is below 10 ns, the retention is longer than 105 s, and the change ratio of resistance (or capacitance) is larger than 100 over the 108 switching cycles. Mor...
| Main Authors: | , |
|---|---|
| Format: | Online |
| Language: | English |
| Published: |
Nature Publishing Group
2013
|
| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3748856/ |