Scaling properties of ballistic nano-transistors
Recently, we have suggested a scale-invariant model for a nano-transistor. In agreement with experiments a close-to-linear thresh-old trace was found in the calculated ID - VD-traces separating the regimes of classically allowed transport and tunneling transport. In this conference contribution, the...
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| Format: | Online |
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2011
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211455/ |
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pubmed-32114552011-11-09 Scaling properties of ballistic nano-transistors Wulf, Ulrich Krahlisch, Marcus Richter, Hans Nano Express Recently, we have suggested a scale-invariant model for a nano-transistor. In agreement with experiments a close-to-linear thresh-old trace was found in the calculated ID - VD-traces separating the regimes of classically allowed transport and tunneling transport. In this conference contribution, the relevant physical quantities in our model and its range of applicability are discussed in more detail. Extending the temperature range of our studies it is shown that a close-to-linear thresh-old trace results at room temperatures as well. In qualitative agreement with the experiments the ID - VG-traces for small drain voltages show thermally activated transport below the threshold gate voltage. In contrast, at large drain voltages the gate-voltage dependence is weaker. As can be expected in our relatively simple model, the theoretical drain current is larger than the experimental one by a little less than a decade. Springer 2011-04-28 /pmc/articles/PMC3211455/ /pubmed/21711899 http://dx.doi.org/10.1186/1556-276X-6-365 Text en Copyright ©2011 Wulf et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
| repository_type |
Open Access Journal |
| institution_category |
Foreign Institution |
| institution |
US National Center for Biotechnology Information |
| building |
NCBI PubMed |
| collection |
Online Access |
| language |
English |
| format |
Online |
| author |
Wulf, Ulrich Krahlisch, Marcus Richter, Hans |
| spellingShingle |
Wulf, Ulrich Krahlisch, Marcus Richter, Hans Scaling properties of ballistic nano-transistors |
| author_facet |
Wulf, Ulrich Krahlisch, Marcus Richter, Hans |
| author_sort |
Wulf, Ulrich |
| title |
Scaling properties of ballistic nano-transistors |
| title_short |
Scaling properties of ballistic nano-transistors |
| title_full |
Scaling properties of ballistic nano-transistors |
| title_fullStr |
Scaling properties of ballistic nano-transistors |
| title_full_unstemmed |
Scaling properties of ballistic nano-transistors |
| title_sort |
scaling properties of ballistic nano-transistors |
| description |
Recently, we have suggested a scale-invariant model for a nano-transistor. In agreement with experiments a close-to-linear thresh-old trace was found in the calculated ID - VD-traces separating the regimes of classically allowed transport and tunneling transport. In this conference contribution, the relevant physical quantities in our model and its range of applicability are discussed in more detail. Extending the temperature range of our studies it is shown that a close-to-linear thresh-old trace results at room temperatures as well. In qualitative agreement with the experiments the ID - VG-traces for small drain voltages show thermally activated transport below the threshold gate voltage. In contrast, at large drain voltages the gate-voltage dependence is weaker. As can be expected in our relatively simple model, the theoretical drain current is larger than the experimental one by a little less than a decade. |
| publisher |
Springer |
| publishDate |
2011 |
| url |
https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211455/ |
| _version_ |
1611486240592363520 |