Scaling properties of ballistic nano-transistors
Recently, we have suggested a scale-invariant model for a nano-transistor. In agreement with experiments a close-to-linear thresh-old trace was found in the calculated ID - VD-traces separating the regimes of classically allowed transport and tunneling transport. In this conference contribution, the...
| Main Authors: | , , |
|---|---|
| Format: | Online |
| Language: | English |
| Published: |
Springer
2011
|
| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211455/ |