Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy
We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE). Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region...
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Springer
2011
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| Online Access: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211162/ |
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pubmed-32111622011-11-09 Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy Wang, Yongjin Hu, Fangren Hane, Kazuhiro Nano Express We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE). Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region is removed from the backside to form freestanding GaN gratings, and the patterned growth is subsequently performed on the prepared GaN template by MBE. The selective growth takes place with the assistance of nanoscale GaN gratings and depends on the grating period P and the grating width W. Importantly, coalescences between two side facets are realized to generate epitaxial gratings with triangular section. Thin epitaxial gratings produce the promising photoluminescence performance. This work provides a feasible way for further GaN-based integrated optics devices by a combination of GaN micromachining and epitaxial growth on a GaN-on-silicon substrate. Springer 2011-02-04 /pmc/articles/PMC3211162/ /pubmed/21711618 http://dx.doi.org/10.1186/1556-276X-6-117 Text en Copyright ©2011 Wang et al; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
| repository_type |
Open Access Journal |
| institution_category |
Foreign Institution |
| institution |
US National Center for Biotechnology Information |
| building |
NCBI PubMed |
| collection |
Online Access |
| language |
English |
| format |
Online |
| author |
Wang, Yongjin Hu, Fangren Hane, Kazuhiro |
| spellingShingle |
Wang, Yongjin Hu, Fangren Hane, Kazuhiro Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy |
| author_facet |
Wang, Yongjin Hu, Fangren Hane, Kazuhiro |
| author_sort |
Wang, Yongjin |
| title |
Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy |
| title_short |
Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy |
| title_full |
Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy |
| title_fullStr |
Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy |
| title_full_unstemmed |
Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy |
| title_sort |
patterned growth of ingan/gan quantum wells on freestanding gan grating by molecular beam epitaxy |
| description |
We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE). Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region is removed from the backside to form freestanding GaN gratings, and the patterned growth is subsequently performed on the prepared GaN template by MBE. The selective growth takes place with the assistance of nanoscale GaN gratings and depends on the grating period P and the grating width W. Importantly, coalescences between two side facets are realized to generate epitaxial gratings with triangular section. Thin epitaxial gratings produce the promising photoluminescence performance. This work provides a feasible way for further GaN-based integrated optics devices by a combination of GaN micromachining and epitaxial growth on a GaN-on-silicon substrate. |
| publisher |
Springer |
| publishDate |
2011 |
| url |
https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3211162/ |
| _version_ |
1611486079373803520 |