Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields

Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields

Bibliographic Details
Main Authors: Duque, Carlos M, Mora-Ramos, Miguel E, Duque, Carlos A
Format: Online
Language:English
Published: Springer 2012
Online Access:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3499168/

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3499168/

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