Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties
Highly mismatched alloys (HMAs) is a class of semiconductor alloys whose constituents are distinctly different in terms of size, ionicity and/or electronegativity. Electronic properties of the alloys deviate significantly from an interpolation scheme based on small deviations from the virtual crysta...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2016
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| Online Access: | http://eprints.nottingham.ac.uk/35135/ http://eprints.nottingham.ac.uk/35135/ http://eprints.nottingham.ac.uk/35135/ http://eprints.nottingham.ac.uk/35135/1/GaNSb_review_revised.pdf |